By Michel Houssa, Athanasios Dimoulas, Alessandro Molle
"Major advancements within the semiconductor are at the horizon by using 2nd fabrics resembling graphene and transition steel dichalcogenides for built-in circuits. This booklet offers the 1st finished remedy of the sphere with an emphasis on functions in nanoelectronic units. Chapters are divided by way of the 3 significant households of such fabrics, protecting graphene for analog and photonic functions, MoS2 (molybdenum disulfide) for good judgment functions and novel fabrics akin to silicene, germanene, stanene and phosphorene"-- Read more...
summary: "Major advancements within the semiconductor are at the horizon by utilizing second fabrics equivalent to graphene and transition steel dichalcogenides for built-in circuits. This publication presents the 1st complete remedy of the sector with an emphasis on purposes in nanoelectronic units. Chapters are divided by means of the 3 significant households of such fabrics, overlaying graphene for analog and photonic purposes, MoS2 (molybdenum disulfide) for good judgment purposes and novel fabrics equivalent to silicene, germanene, stanene and phosphorene"
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Lett. 96, 246802, 2006. 23. K. Ziegler, Phys. Rev. Lett. 80, 3113, 1998. 24. P. M. Ostrovsky, I. V. Gornyi and A. D. Mirlin, Phys. Rev. B 74, 235443, 2006. 25. J. H. Chen, C. Jang, S. Xiao, M. Ishigami and M. S. Fuhrer, Nat. Nanotechnol. 3, 206, 2008. 26. R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber, N. M. R. Peres and A. K. Geim, Science 320, 1308, 2008. 27. Z. Q. Li, E. A. Henriksen, Z. Jiand, Z. Hao, M. C. Martin, P. Kim, H. L. Stormer and D. N. Basovi, Nat.
13b. External gates can be used to place the separate layers at different potential energies, resulting in a non-zero Δ and thus an energy gap. Such an external potential will also induce different charges in both layers. This has been studied within a self-consistent Hartree approximation in a TB model in Reference 33. 13 Electronic band of bilayer graphene for (a) Δ = 0 and (b) Δ ≠ 0. In order to study the transport properties of bilayer graphene, it is useful to find an effective low-energy Hamiltonian.
Partoens and F. M. Peeters, Phys. Rev. B 74, 075404, 2006. 35. B. Partoens and F. M. Peeters, Phys. Rev. B 75, 193402, 2007. 36. C. J. Shih, A. Vijayaraghavan, R. Krishnan, R. Sharma, J. H. Han, M. H. Ham, Z. Jin et al. Nat. Nanotechnol. 6, 439, 2011. 37. H. Min and A. H. MacDonald, Phys. Rev. B 77, 155416, 2008. 38. A. A. Avetisyan, B. Partoens and F. M. Peeters, Phys. Rev. B 79, 035421, 2009. 39. A. A. Avetisyan, B. Partoens and F. M. Peeters, Phys. Rev. B 81, 115432, 2010. 40. J. D. , Wiley, New York, 1998.
2D materials for nanoelectronics by Michel Houssa, Athanasios Dimoulas, Alessandro Molle