Download PDF by Author Unknown: Advances in Electronics and Electron Phisics. Vol. 58

By Author Unknown

ISBN-10: 0080577237

ISBN-13: 9780080577234

ISBN-10: 0120146584

ISBN-13: 9780120146581

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In order to simplify the analysis, we will assume that history-dependence is totally nonexistent, so MODELING OF IRRADIATED MOS STRUCTURES 35 that the flat-band shift will be entirely determined by the piecewise-linear family of approximate curves shown in Fig. 10a and b and by the chosen form of V,,(D). By reading the value of V,, from Fig. 13b that corresponds to the specified combination of V,, and D at the end of each horizontal line segment in Fig. 13a, one can easily construct the hypothetical (but realistic) curve shown in Fig.

13a, the gate voltage is decreasing with each step; hence, as can be seen by the dashed line in Fig. 13b, the device is drawing closer to dynamic equilibrium. Finally, at V,, = 0 V the device falls exactly at the transition point between the nonequilibrium and the dynamic equilibrium modes. For subsequent irradiation increments the cumulative dose is great enough that for relatively small values of V,, the device is able to sustain dynamic equilibrium. However, after Vgr. again begins to increase with each step (see Fig.

The complete understanding of the mechanisms involved in describing this phenomenon is tied to a rather complex charge redistribution process mentioned above. A proposed model that capitalizes on this so-called memory effect will be given in Section IV. The model to be presented in Section V fully accounts for observed memory effects. In type 2 experiments, V,, can be varied by the investigator in a completely arbitrary manner as D continues to increase monotonically with time. The overall structure of the resulting plots of V,, versus V,,(D) will be uniquely determined by the specific functional relationship between Vgr and D that was chosen.

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Advances in Electronics and Electron Phisics. Vol. 58 by Author Unknown

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