By Tony Chan Carusone, David A. Johns, Kenneth W. Martin
The second version of Analog built-in Circuit Design makes a speciality of extra assurance approximately different types of circuits that experience elevated in value long ago decade. in addition, the textual content is stronger with fabric on CMOS IC machine modeling, up-to-date processing structure and increased assurance to mirror technical thoughts. CMOS units and circuits have extra impression during this version in addition to a discounted volume of textual content on BiCMOS and bipolar info. New chapters comprise subject matters on frequency reaction of analog ICs and easy concept of suggestions amplifiers.
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Extra info for Analog Integrated Circuit Design (2nd Edition)
SiO2 Gate W W W n+ } tox n+ L n channel Fig. 10 The important dimensions of a MOS transistor. 7. The current is actually conducted by negative carriers (electrons) flowing from the source to the drain. Negative carriers flowing from source to drain results in a positive current from drain to source, I DS. 2 19 MOS Transistors V G >> V tn VS = 0 VD > 0 Depletion region n+ n+ Increasing x Q n ( 0 ) = C ox ( V GS – V tn ) Q n ( L ) = C ox ( V GD – V tn ) Q n ( x ) = C ox ( V GS – V ch ( x ) – V tn ) Fig.
However, these values are very useful during design for quickly and roughly estimating the device sizes, currents and voltages required to obtain a desired g m. The second voltage-controlled current-source in Fig. 17, shown as g s v s , models the body effect on the small-signal drain current, id. When the source is connected to small-signal ground, or when its voltage does not change appreciably, then this current source can be ignored. When the body effect cannot be ignored, we have ∂ I ∂V tn ∂ ID g s = ----------- = ---------D- ----------∂V tn ∂V SB ∂V SB 14.
This equation is perhaps Key Point: For VDS > Veff, a MOS device the most important one that describes the large-signal operation of a MOS tran- exhibits a square-law sistor. 63) represents a square-law current–voltage current–voltage relationship for a MOS transistor in the active region. In the case of a BJT tran- relationship. sistor, an exponential current–voltage relationship exists in the active region. 63) implies that the drain current, ID, is independent of the drain-source voltage. This independence is only true to a first-order approximation.
Analog Integrated Circuit Design (2nd Edition) by Tony Chan Carusone, David A. Johns, Kenneth W. Martin